a SiC mesfet covering the frequency from 200-500 MHz is designed and fabricated. A novel natural selection essays and efficient way to extend the physical simulations to large signal high frequency domain was developed in our group, is further extended to study the class-C switching response of the devices. The results obtained at 500 MHz are, PAE.3, a power density.5 W/mm with a switching loss.69 W/mm. SortOrder 1, aDMV7810, power Amp 81G 86G 20 28 33, internal 29 - 2, aDMV7710, power Amp 71G 76G 24 28 34, internal 29 -.
A comparison between the physical simulations and measured device characteristics has also been carried out. All items in UWSpace are protected by copyright, with all rights reserved. In this thesis, Class C switching response of SiC mesfet in tcad and two different generations of broadband power amplifiers have been designed, fabricated and characterized. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. Some features of this site may not work without. At a drain bias of Vd 66 V at 700 MHz the Pmax was.2 dBm (16.6 W) with a PAE.4. The measured results for GaN amplifier are; maximum output power at Vd 48 V is 40 dBm (10 W with a PAE of 34 and a power gain above. By the extended technique the switching losses, power density and PAE in the dynamics of the SiC mesfet transistor at four different frequencies of 500 MHz, 1, 2 and 3 GHz during large signal operation and the source of switching losses in the device structure. The measured maximum output power for the SiC amplifier at Vd 48 V was.3 dBm (13.7 W with a PAE of 32 and a power gain above.
Gan power amplifier thesis